Mechanism for LO-phonon temperature overshoot in GaAs
نویسندگان
چکیده
منابع مشابه
LO-phonon overheating in quantum dots
Longitudinal optical phonons have been used to interpret the electronic energy relaxation in quantum dots and at the same time they served as a reservoir, with which the electronic subsystem is in contact. Such a phonon subsystem is expected to be passive, namely, in a long-time limit the whole system should be able to achieve such a stationary state, in which statistical distributions of both ...
متن کاملTransient velocity overshoot dynamics *in GaAs for electric fields
We have experimentally studied the transient velocity overshoot dynamics of photoexcited carriers in GaAs for electric fields as great as 200 kV/cm. Time domain waveforms proportional to the velocity and the acceleration of carriers have been acquired? respectively, from guided and free-space radiating signals which contain terahertz frequency components. The measurements demonstrated that the ...
متن کاملTemperature dependence of the LO phonon sidebands in free exciton emission of GaN
Temperature-dependent radiative recombination of free excitons involving one or two LO phonons in GaN is investigated in detail. It is found that both phonon sidebands possess asymmetric lineshapes and their energy spacings from the zero-phonon line strongly deviate from the characteristic energy of LO phonons as the temperature increases. Furthermore, the deviation rates of oneand two-phonon s...
متن کاملInvestigation of field, carrier, and coherent phonon dynamics in low-temperature grown GaAs
We compare the dynamics of electric field, transport, and coherent phonons in as-grown and annealed low-temperature (LT) GaAs by an electro-optic technique on a subpicosecond time scale. The buildup and decay of space-charge fields associated with the photo-Dember effect are investigated. The recombination dynamics of trapped carriers is monitored via the ps decay of the electro-optic signal. D...
متن کاملEarly-stage relaxation of hot electrons by LO phonon emission
Ultrafast spectroscopy gives insight into the relaxation and dephasing of electrons during the first femtoseconds after an optical excitation. A theoretical description of this early-time regime requires a proper treatment of retardation effects for the different scattering processes. The scattering of electrons by optical phonons is investigated within the S-matrix formalism. This perturbative...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 1994
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.49.7257